TECH ROOM

STMicroelectronics’ STL120N10F8 N-channel 100V power MOSFETs combine extremely low gate-drain charge (QGD) and on-resistance RDS(on), giving 40% better figure of merit...

COLORADO SPRINGS, Colo.- Frontgrade and Lattice Semiconductor Corporation, the low power programmable FPGA leader, successfully collaborated to launch the radiation-tolerant Lattice...

PVA, a global supplier of automated dispensing and coating equipment, is pleased to announce that it has been awarded a...

Maldon, Essex, UK – CML Microcircuits has announced the availability of the CMX90B701 and CMX90B702 Low Current/Noise Gain Blocks. These...

TOKYO, Japan ― Renesas Electronics Corporation has extended its industry-leading RISC-V portfolio with the first RISC-V MCU designed for voice-controlled HMI (human-machine...

Greensboro, NC – Qorvo® will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs....

Plano, Texas – Diodes Incorporated introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel...

ROHM has announced that precision power analog company, Apex Microtechnology, is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky...

Murata has announced the launch of its newest Bluetooth® Low Energy (LE) module, the Type 2EG. Based on the RSL15 secure Bluetooth...

Bangalore - R&M, the globally active developer and provider of high-end infrastructure solutions for data and communications networks, is launching...