Munich, Germany – Infineon Technologies AG has introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V: The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package. The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Compared to the previous generation, the RDS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best RDS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package. In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
Availability
The IAUCN08S7N013 is in mass-production and available now. More information is available at www.infineon.com/iaucn08s7n013/.
Infineon at Embedded World
Embedded World will take place in Nuremberg from 9 to 11 April, 2024, Germany. Infineon will present its products and solutions for decarbonization and digitalization in hall 4A, booth #138 and virtually. Company representatives will also hold several TechTalks as well as presentations at the accompanying Embedded World Conference, followed by discussions with the speakers. Information about the Embedded World show highlights is available at www.infineon.com/embeddedworld.
