The ultra-low 0.28 mΩ eGaN® FET has a transient voltage rating of 22 V enabling higher efficiency, 1 MHz or...
Read moreROHM has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. . In the data...
Read moreMunich, Germany – Infineon Technologies AG will supply CoolSiC™ MOSFETs 1200 V and matching dual-channel EiceDRIVER™ 2EDB9259Y gate drivers to...
Read moreOffered in the PowerPAK®  SO-8 Single Package, Devices Provide High Vth(min) > 2.5 V and Qgd / Qgs Ratios < 1 MALVERN, Pa. — Vishay Intertechnology, Inc....
Read morePanasonic Industry Europe’s PhotoMOS® mobile app is now available for Android devices. The app offers developers easy and valuable orientation...
Read moreMunich, Germany – Megatrends such as green mobility, robotics, and artificial intelligence are placing increasingly demanding requirements on power systems...
Read moreLake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance,...
Read moreLEHIGH VALLEY, PA– iDEAL Semiconductor has announced the expansion of its SuperQ™ 200V MOSFET portfolio, delivering industry-leading on-resistance across the most widely...
Read moreMunich, Germany – Infineon Technologies AG launches new packages for the CoolSiC™ MOSFET 750 V G2 technology, engineered to deliver...
Read moreMunich, Germany – Infineon Technologies AG has expanded its CoolSiC™ MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT...
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