Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs

• Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
• Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
• Developed for 3300V, 2300V, and 1200V SiC MOSFET products.

TORRANCE, CA – Navitas Semiconductor, an industry leader in next-generation GaNFast^™ gallium nitride (GaN) and GeneSiC^™ silicon carbide (SiC) power semiconductors, today announced the launch of its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices.

Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like performance in a compact discrete form factor. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK® power modules, QDPAK, TO‑247‑LP, and other high‑performance solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers.

System Benefits:

• Integrated High-Voltage Isolation: By integrating an Aluminum Nitride (AlN) substrate, this package offers robust high-voltage isolation exceeding 6000 V — eliminating the need for external isolation materials and simplifying system design.
• Direct-Cooled, Reflow-Compatible Thermal Management: A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces R_TH,J-HS by up to 60%, leading to up to 150% increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost.
• Reduced Coupling Capacitance & Radiated EMI: Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation.
• Superior Power and Thermal Cycling Lifetime: Built on a high-performance AlN substrate with active metal brazing (AMB) technology and a robust reflow-compatible heatsink interface, this package eliminates the need for external TIM and isolation materials from the system stack – delivering superior power cycling capability and enhanced thermal cycling lifetime.
• Industry-Standard Form-Factor and Footprint: Compatible with the established high-voltage TO‑247‑4 form factor and lead geometry, this package allows effortless system integration with no redesign — while delivering superior performance, increased reliability, and lower total system cost.

“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”

Product Portfolio:

The UHV-TO-247-4-ISO package is offered in 3300V, 2300V, and 1200V SiC MOSFET ratings. This packaging breakthrough enables performance improvements in high-voltage grid-tied power conversion systems (PCS), solid-state transformers (SST), battery energy storage systems (BESS), and renewable energy applications.

The new package, together with its direct-cooled heatsink assembly, will be available at the Navitas Booth at PCIM Europe 2026, in Nuremberg, booth #544, Hall 9.

To request samples and product collateral, please contact a Navitas Sales Representative or write to [email protected].