Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, is set to give an advanced preview of an upcoming Gen4 1700 V SiC half-bridge MOSFET module (GCMS1P7C170S4B1-N) at Electronica 2026.
The device uses SemiQ’s fourth-generation SiC to enable the highest current capability (830 A) and has an ultra-low RDSon of just 1.7 mΩ. It is housed in a standard 62 mm x 152 mm S4 package, which allows power design engineers to seamlessly upgrade existing systems without costly redesigns. Further details will be made available to people visiting SemiQ on stand A6.620 (Alfatec).
The new lineup has been designed to meet the rising power and thermal demands of electric vehicles (EV), motor drives, smart-grid infrastructure, and uninterruptible power supplies (UPS) applications.
Additional Electronica Highlights
SemiQ will also exhibit its advanced QSiC™ Gen3 SiC modules, which have been developed for high-power applications, such as EV charging stations, energy storage systems, and industrial motor drives.
These include:
- QSiC Dual3 Modules: This line of 1200 V half-bridge MOSFET modules enables the creation of power converters with industry-leading conversion efficiency and power density.
- S3 Modules: Featuring a 608 A half-bridge module with an ultra-low 2.4 mΩ RDSon and a junction-to-case thermal resistance (RθJC) of just 0.07oC/W.
- SOT-227 Modules: These include five modules with RDSon values of 7.4, 14.5, and 34 mΩ, optimized for server power supplies, battery chargers, and PV inverters.
- B2T1 Six-Pack Modules: Spanning an RDSon range of 19.5 to 82 mΩ designed to minimize parasitics in motor drives and advanced AC-DC converters.
- B3 Full-Bridge Modules: Delivering up to 120 A with RDSon as low as 8.6 mΩ. These modules maximize power density for high-voltage DC-DC systems.
“Our Gen4 SiC technology delivers unmatched efficiency and reliability for high-power applications and the previewed 1700 V MOSFET module takes this concept further, delivering 830 A with an exceptionally low on-resistance,” said Dr. Timothy Han, President at SemiQ.
Details of Gen3 and Gen4 products are available on semiq.com.
