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Home TECH ROOM Embedded

Alliance Memory Introduces New 4Mb and 16Mb 3V Multiple I/O Serial NOR Flash Memory Solutions

Offered in SOP8 Narrow Body Package, Devices Deliver Enhanced Performance With Fast Read, Program, and Erase Times

Nimish by Nimish
November 15, 2023
in Embedded, Product News
Reading Time: 2 mins read
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KIRKLAND, Wash. — Alliance Memory today announced that is has expanded its offering of 3V multiple input/output serial NOR flash memory products with new 4Mb and 16Mb devices in the SOP8 Narrow Body (150mils) package. The 4Mb AS25F304MD-10S1IN and 16Mb AS25F316MQ-10S1IN combine fast read performance up to 104MHz with fast program and erase times down to 1.1ms and 2.6ms, respectively.

The devices released today operate from a single 2.7V to 3.6V power supply over an industrial temperature range of -40°C to +85°C. The AS25F304MD-10S1IN offers support for single and dual SPI operation, while the AS25F316MQ-10S1IN adds support for the quad SPI mode. The solutions offer maximum erase/program currents down to 1.3mA and maximum read currents down to 3.7mA at 104MHz, and they provide reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention.

The devices support uniform 4KB or 32KB or 64KB erase and feature program/erase suspend and resume. The AS25F316MQ-10S1IN also offers an 8/16/32/64 byte wrap-around burst read mode. Advanced security features include block protection, 128-bit unique ID for each device, a discoverable parameters (SFDP) register, and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing.

With their enhanced performance, the serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, and IoT markets. The devices are ideal for use in chipsets for hard drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, digital cameras, Bluetooth® devices, handheld GPS units, smart meters, and more.

Device Specification Table:

Part numberAS25F304MD-10S1INAS25F316MQ-10S1IN
Density4Mb16Mb
Bus widthSerial Multi IO (x1/x2/)Serial Multi IO (x1/x2/x4)
VCC2.7V to 3.6V
Frequency104MHz
Active read current max.4.4mA3.7mA
Program/erase current max.1.4mA1.3mA
Program time typ.1.1ms
Sector erase time typ.2.6ms5.1ms
Standby current typ.8mA
Temperature range-40°C to +85°C
PackageSOP8 Narrow Body (150mils)

Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 8 to 12 weeks.

Tags: Alliance Memoryflash memory
Nimish

Nimish

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