Semiconductor

Polymatech Electronics has introduced a complete range of high-quality sapphire substrates which includes two, three, and four-inch diameter sapphire wafers...

Texas Instruments (TI) debuted a highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction...

High-voltage electrical subsystems throughout Battery Electric Vehicles (BEVs) and Hybrid Electric Vehicles (HEVs) require a mechanism to protect the high-voltage...

Nexperia released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications....

onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics...

Cambridge GaN Devices (CGD) launched the second series of its ICeGaN™ 650 V gallium nitride HEMT family, delivering industry-leading robustness,...

Power Integrations announced a new, single-channel, plug-and-play gate driver for 190 mm x 140 mm IHM and IHV IGBT modules...

AVIVA Links announced that it will be at AutoSens Detroit 2023 demonstrating OMNIVISION’s in-vehicle camera sensor to processor connectivity using AVIVA’s ASA Motion Link...

The STMicroelectronics L6983i 10W isolated buck (iso-buck) converter ensures high efficiency and a compact footprint, with advantages including low quiescent current and 3.5V-38V...

GOLETA, Calif.—Transphorm, Inc. has announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is...