STMicroelectronics’ STL120N10F8 N-channel 100V power MOSFETs combine extremely low gate-drain charge (QGD) and on-resistance RDS(on), giving 40% better figure of merit...
Read moreGreensboro, NC – Qorvo® will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs....
Read morePlano, Texas – Diodes Incorporated introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel...
Read moreROHM has announced that precision power analog company, Apex Microtechnology, is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky...
Read morePanasonic Industry has announced that its hybrid polymer capacitors are immediately available. Max Jakob, Division Director EMEA / Device Solution...
Read moreAnalog Devices has introduced a super low noise dual output DC/DC μModule regulator with patented silicon, layout, and packaging innovations....
Read moreOmron Electronic Components Europe has further expanded its MOSFET relay G3VM series line-up now offering increased sensitivity and higher dielectric...
Read moreNexperia, the expert in essential semiconductors, today announced the release of its first 80 V and 100 V application-specific MOSFETs...
Read morePower Integrations announced a 900-volt gallium-nitride (GaN) extension to the company’s InnoSwitch3™ family of flyback switcher ICs. The new ICs,...
Read moreMany modular low-power DC/DCs on the market have been designed to suit manual, low-cost assembly, which only suits the simplest...
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