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Home Semiconductor Power Electronics

DC/DC Converter for IGBT/SiC MOSFET Driver – QA_(T)-R3G Series

Written by MORNSN POWER

Editorial by Editorial
April 12, 2024
in Power Electronics, Tech Article
Reading Time: 3 mins read
QA_(T)-R3G Series
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Introduction

The range and requirements of semiconductor devices are constantly expanding with the emergence of new energy industry. The key component of semiconductor devices in EV charging systems and PV SVG systems is IGBT/SiC MOSFET, which requires higher standards for driving solutions.

MORNSUN has introduced the NEW DC/DC converter QA-R3G family special for IGBT/SiC MOSFET Driver.

Advantages

1. Isolation voltage: 5000VAC, reinforced insulation Based on MORNSUN independent IC design, QA-R3G family’s isolation voltage is up to 5000VAC, higher than the conventional products on the market (3750VAC). And the QA-R3G family can meet the requirements of reinforced insulation, the overall reliability has been greatly improved.

2. Long-term insulation voltage: 1700V

IGBT/SiC MOSFET as the mainstream semiconductor devices, the most voltage classes are 650V/900V/1200V/1700V. Complying with IEC-61800-5-1 standard, QA-R3G family features a long-term insulation voltage (continuous discharge) up to 1700V, which can be used for the IGBT/SiC MOSFET devices that their voltages below 1700V.

3. Performance upgrade compared with QA series

 ParameterQA SeriesQA-R3G Series
1Efficiency80%86%
2Ripple75mVpp50mVpp
3Capacitive Load220uF2200uF
4ESD performance±6kV±8kV

Selection Guide 

Applications

QA_(T)-R3G Series can be widely used in the IGBT/SiC MOSFET driving solutions of EV charging and PV industry.

Features

For more information, please visit www.mornsun-power.com

Tags: DC/DC converterIGBTMornsunSiC MOSFET Driver
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