Munich, Germany – Infineon Technologies AG has added HYPERRAM 3.0 to its portfolio of high-bandwidth, low-pin count memory solutions. The device features a new,16-bit extended version of the HyperBus interface that doubles throughput to 800 MBps. With HYPERRAM 3.0, Infineon offers a portfolio of high-bandwidth memories with low pin-count and low-power. It is a perfect fit for applications requiring expansion RAM memory, including video buffering, factory automation, Artificial Intelligence of Things (AIoT) and automotive vehicle-to-everything (V2X), as well as applications requiring scratch-pad memory for intense mathematical calculations.
“With nearly three decades of memory solutions knowledge, we are excited to bring another industry-first to the market. The new HYPERRAM 3.0 memory solutions achieve a far higher throughput-per-pin than existing technologies in the market such as PSRAMs and SDR DRAMs,” said Ramesh Chettuvetty, Senior Director of Applications and Marketing at Infineon’s Automotive Division. “Our low-power features enable better power consumption, without sacrificing throughput, which also makes this memory ideal for industrial and IoT solutions.”
Infineon’s HYPERRAM is a stand-alone PSRAM-based volatile memory that offers a simple and cost-optimized way to add extension memory. The data rates are equivalent to SDR DRAM but with much lower pin-count and lower power requirements. The increased per-pin data throughput of the HyperBus interface makes it possible to use microcontrollers (MCUs) with fewer pins and PCBs with fewer layers. This provides opportunities for lower-complexity and thus cost-optimized designs to support target applications.
For more information, visit www.infineon.com/HYPERRAM.
