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Home News Industry News

Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks

GaNFast™ and GeneSiC™ power technologies deliver portability, efficiency, and sustainability for Dell AI notebook computer adapters from 60 W to 360 W

Nimish by Nimish
February 6, 2025
in Industry News, Semiconductor
Reading Time: 2 mins read
Navitas

Navitas’ GaN & SiC Devices

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TORRANCE, CA — Navitas Semiconductor, the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s family of notebook adapters, from 60 W to 360 W.

Enabled by over 20 years of SiC technology leadership, GeneSiC leads on performance of SiC MOSFETs with patented ‘trench-assisted planar’ technology and 5th-gen GeneSiC silicon carbide (SiC) diodes to deliver high-speed, high-efficiency performance with proprietary ’low-knee’ technology for cool operation.

Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices.

Navitas GaN & SiC technology together enables Dell to provide high-speed charging, with highest efficiency, coolest temperature, smallest size, and lowest material count. Dell’s latest line-up of AI notebooks includes Neural Processor Units (NPUs), which are dedicated AI engines, to manage sustained AI and AI offload. This builds on Dell’s portfolio as the broadest GaN adapter offering for notebooks in the industry.

The new adapters will also help Dell achieve its advanced sustainability goals, with a focus on CO2 reduction and energy reduction. The adapter cases require up to 50% less plastic and are made with post-recycled materials, significantly reducing energy waste, and improving resource utilization. Navitas’ GaNFast and GeneSiC technologies increase the level of system integration and switching frequency, which reduces the number of components, as well as the size, resulting in a ‘dematerialization’ that lowers carbon footprint throughout the production, packaging, and logistics processes. Each GaNFast power IC shipped saves 4 kg CO2 and every SiC MOSFET shipped saves 25 kg CO2 vs. legacy silicon power chips.

“Since Dell’s first GaN adapter was enabled by Navitas back in 2020, we’ve worked closely with Dell engineering to further improve charging speed, efficiency, size, weight, and now environmental footprint”, said Gene Sheridan, CEO and co-founder of Navitas. “Dell’s new adapters are an optimal solution for speed, portability, and sustainability. Our clients achieve a win-win for both the market and environment by deploying Navitas GaNFast power ICs and GeneSiC power devices.”

For more information on our GaNFast portfolio and charging system solutions, please contact  visit www.navitassemi.com.

Tags: DellGaNNavitas Semiconductorpower semiconductorSSiC devices
Nimish

Nimish

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