ROHM Unveils an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
ROHM has developed an isolated gate driver IC - the BM6GD11BFJ-LB. It is designed specifically for driving 600V-class high-voltage GaN ...
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Tag: GaN Devices
Highest Power Density for DCDC Converters Demonstrated by Vitesco using Infineon’s CoolGaN Transistors
Munich, Germany – DCDC converters are essential in any electric or hybrid vehicle to connect the high-voltage battery to the ...
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Infineon Technologies Sues Innoscience for Patent Infringement
Munich, Germany – Infineon Technologies AG today filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) ...
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Rugged ICeGaN GaN Hemts from CGD Now Available in High Volume
Cambridge GaN Devices (CGD has announced that its IceGaN™ smart HEMT, monolithically-integrated power solutions are now available for volume shipment. ...
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CGD, NEWAYS Sign GaN-Based Clean Energy Deal at Electronica
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make ...
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Cambridge GaN Devices Demonstrates Ease of Use of New, Available GaN Devices at Electronica 2022
Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices ...
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