Transphorm Unveiled Low-Cost Driver Solution for SuperGaN FETs
GOLETA, Calif. —Transphorm, Inc. has released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications ...
Read moreGOLETA, Calif. —Transphorm, Inc. has released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications ...
Read moreCambridge GaN Devices (CGD) launched the second series of its ICeGaNâ„¢ 650 V gallium nitride HEMT family, delivering industry-leading robustness, ...
Read moreGOLETA, Calif.—Transphorm, Inc. has announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is ...
Read moreGuildford, UK: ipTEST has been honoured with the prestigious King’s Award for Enterprise in recognition of advancing the test capabilities ...
Read moreCambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power ...
Read moreCambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make ...
Read morePower Integrations announced a 900-volt gallium-nitride (GaN) extension to the company’s InnoSwitch3™ family of flyback switcher ICs. The new ICs, ...
Read moreCambridge, UKÂ -Â Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to ...
Read moreCambridge GaN Devices (CGD) has announced the second in its series of webinar tutorials targeting designers, engineers and managers who ...
Read moreNavitas Semiconductor has announced an agreement to acquire the remaining minority interest in its silicon control IC joint venture from Halo Microelectronics for ...
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