Tag: GaN

Cambridge GaN Devices (CGD) launched the second series of its ICeGaN™ 650 V gallium nitride HEMT family, delivering industry-leading robustness, ...

GOLETA, Calif.—Transphorm, Inc. has announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is ...

Guildford, UK: ipTEST has been honoured with the prestigious King’s Award for Enterprise in recognition of advancing the test capabilities ...

Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power ...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make ...

Power Integrations announced a 900-volt gallium-nitride (GaN) extension to the company’s InnoSwitch3™ family of flyback switcher ICs. The new ICs, ...

Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to ...

Cambridge GaN Devices (CGD) has announced the second in its series of webinar tutorials targeting designers, engineers and managers who ...

Navitas Semiconductor has announced an agreement to acquire the remaining minority interest in its silicon control IC joint venture from Halo Microelectronics for ...

Munich, Germany – Infineon Technologies AG has announced the addition of the new XENSIV™ TLE4971 family to its current sensor ...