Renesas Introduces New MOSFETs with Exceptional Performance
TOKYO, Japan ― Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced new 100V high-power N-Channel MOSFETs ...
Read moreTOKYO, Japan ― Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced new 100V high-power N-Channel MOSFETs ...
Read moreCHICAGO— Littelfuse, Inc. has announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression ...
Read moreSTMicroelectronics is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in ...
Read moreCHICAGO — Littelfuse, Inc. is excited to announce the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. ...
Read moreMunich, Germany – Infineon Technologies AG introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' ...
Read moreTHIEF RIVER FALLS, Minnesota, USA - DigiKey has announced that the EFUSE-48V100A reference design product from Vishay, a global technology ...
Read moreGOLETA, Calif.—Transphorm has announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power ...
Read moreNijmegen- Nexperia has announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in ...
Read moreBengaluru, India– element14 is now stocking the 1kW analogue bridgeless power factor correction (PFC) device utilizing the BARBI topology from ...
Read moreMunich, Germany– Today’s 3.3 kW switched-mode power supplies (SMPS) can achieve power densities of 100 W/inch³ by utilizing the latest ...
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