Littelfuse Launchs IX4352NE Low-Side Gate Driver for SiC MOSFETs and High-Power IGBTs
CHICAGO — Littelfuse, Inc. is excited to announce the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. ...
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Tag: MOSFETs
Infineon Introduce CoolSiC™ MOSFETs 2000 V Offer Increased Power Density without Compromising System Reliability
Munich, Germany – Infineon Technologies AG introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' ...
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New eFuse Reference Design Product from Vishay Now Available at DigiKey
THIEF RIVER FALLS, Minnesota, USA - DigiKey has announced that the EFUSE-48V100A reference design product from Vishay, a global technology ...
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Transphorm Demonstrated up to 5 Microsecond SCWT on a GaN Power Transistor with a Patented Technology
GOLETA, Calif.—Transphorm has announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power ...
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Nexperia Announced a Broadening of Package Options for NextPower 80/100 V MOSFETs Portfolio
Nijmegen- Nexperia has announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in ...
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element14 Now Stocking the 1kW Analogue Bridgeless PFC Device
Bengaluru, India– element14 is now stocking the 1kW analogue bridgeless power factor correction (PFC) device utilizing the BARBI topology from ...
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Infineon unveiled the next generation of dual-channel isolated gate driver ICs
Munich, Germany– Today’s 3.3 kW switched-mode power supplies (SMPS) can achieve power densities of 100 W/inch³ by utilizing the latest ...
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onsemi released 1200 V EliteSiC M3S devices
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics ...
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Infineon Enables Innovative Solution for Second life of Electric Passenger Car Batteries
Munich— STABL Energy GmbH uses MOSFETs from Infineon Technologies AG to make stationary energy storage systems from retired electric passenger ...
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ST 100V Industrial-Grade STripFET F8 Devices Improve FoM
STMicroelectronics’ STL120N10F8 N-channel 100V power MOSFETs combine extremely low gate-drain charge (QGD) and on-resistance RDS(on), giving 40% better figure of merit ...
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