ROHM launches New Top-Side Cooling Package for SiC MOSFETs
ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation ...
Read moreROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation ...
Read moreDirect-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride ...
Read moreNational: The growth of artificial intelligence (AI) and the electrification of everything are driving an ever-increasing demand for higher levels ...
Read moreSMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s ...
Read moreConventional discrete SiC MOSFETs rely on an external thermally conductive and electrically isolating material for heatsink isolation. This approach increases ...
Read moreZonal platform. Domain architecture. Those are words people almost never hear in the context of the car they will drive ...
Read moreBengaluru, India – Farnell has announced the addition of Diotec Semiconductor’s range of discrete semiconductor and associated peripheral stock, which ...
Read moreSTMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized ...
Read moreSTMicroelectronics and Geely Auto Group has announced they have signed a long-term Silicon Carbide (SiC) supply agreement to accelerate their existing ...
Read moreCHICAGO — Littelfuse, Inc. is excited to announce the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. ...
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