STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized ...
Read moreSTMicroelectronics and Geely Auto Group has announced they have signed a long-term Silicon Carbide (SiC) supply agreement to accelerate their existing ...
Read moreCHICAGO — Littelfuse, Inc. is excited to announce the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. ...
Read moreSCOTTSDALE, Ariz., onsemi hosted its latest Analyst Day in New York City on May 16, 2023 under the theme “Accelerating ...
Read moreSCOTTSDALE, Ariz. – onsemi has announced that Sineng Electric will integrate onsemi EliteSiC silicon carbide (SiC) MOSFETs and IGBT-based high-density power integrated modules (PIMs) ...
Read moreGreensboro, NC – Qorvo® will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs. ...
Read moreThe demand for electric vehicle (EV) power electronics will increase dramatically in the next ten years, primarily driven by rapid ...
Read moreRenesas Electronics Corporation has announced a new gate driver IC that is designed to drive high-voltage power devices such as ...
Read moreSTMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK1 2 package technology ...
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