ST and Sanan Optoelectronics to advance SiC ecosystem in China
STMicroelectronics and Sanan Optoelectronics has announced that they have signed an agreement to create a new 200mm silicon carbide device ...
Read moreSTMicroelectronics and Sanan Optoelectronics has announced that they have signed an agreement to create a new 200mm silicon carbide device ...
Read moreonsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics ...
Read morePower Integrations introduced the SCALE-iFlexâ„¢ LT NTC family of IGBT/SiC module gate drivers. The new gate drivers target the popular ...
Read moreMunich, Germany – Infineon Technologies AG is diversifying its silicon carbide (SiC) supplier base and has signed a long-term agreement ...
Read moreGuildford, UK: ipTEST has been honoured with the prestigious King’s Award for Enterprise in recognition of advancing the test capabilities ...
Read moreTUCSON, Arizona, U.S.A. – Apex Microtechnology has announced the release of the SA111, the latest addition to their line of ...
Read moreKARIYA, Japan– DENSO CORPORATION has announced it has developed its first-ever inverter with silicon carbide (SiC) semiconductors. This inverter, which ...
Read moreMicrochip Technology Inc. a leading provider of smart, connected and secure embedded control solutions, today announces plans to invest $880M ...
Read moreNavitas Semiconductor has announced an agreement to acquire the remaining minority interest in its silicon control IC joint venture from Halo Microelectronics for ...
Read moreVishay Intertechnology has introduced seven new MOSFET and diode power modules designed specifically for on-board charger applications. Offered in a ...
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