onsemi released 1200 V EliteSiC M3S devices
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics ...
Read moreonsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics ...
Read moreMunich, Germany – Infineon Technologies AG is diversifying its silicon carbide (SiC) supplier base and has signed a long-term agreement ...
Read moreMunich and Schramberg, Germany – Infineon Technologies AG and Schweizer Electronic AG are collaborating on an innovative way to further ...
Read moreTUCSON, Arizona, U.S.A. – Apex Microtechnology has announced the release of the SA111, the latest addition to their line of ...
Read moreAt APEC 2023, Infineon Technologies AG has announced the company is joining forces with Infinitum, creator of the sustainable, breakthrough ...
Read moreSiC and GaN Semiconductors Advances in silicon carbide and gallium nitride technologies have been characterised by development, expanding industry adoption, ...
Read moreCambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to ...
Read moreCambridge GaN Devices (CGD) has announced the second in its series of webinar tutorials targeting designers, engineers and managers who ...
Read moreGerman President Frank-Walter Steinmeier visited Infineon Technologies AG in Kulim, Malaysia, as part of his trip to Asia. The visit ...
Read moreDiodes Incorporated has announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...
Read more