Transphorm Demonstrated up to 5 Microsecond SCWT on a GaN Power Transistor with a Patented Technology
GOLETA, Calif.—Transphorm has announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power ...
Read moreGOLETA, Calif.—Transphorm has announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power ...
Read moreMunich, Germany –The decarbonization trend will result in strong market growth for power semiconductors, in particular those based on wide ...
Read moreTOKYO | Durham, N.C. ― Renesas Electronics Corporation has announced the execution of a wafer supply agreement and $2 billion (USD) ...
Read moreonsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics ...
Read moreMunich, Germany – Infineon Technologies AG is diversifying its silicon carbide (SiC) supplier base and has signed a long-term agreement ...
Read moreMunich and Schramberg, Germany – Infineon Technologies AG and Schweizer Electronic AG are collaborating on an innovative way to further ...
Read moreTUCSON, Arizona, U.S.A. – Apex Microtechnology has announced the release of the SA111, the latest addition to their line of ...
Read moreAt APEC 2023, Infineon Technologies AG has announced the company is joining forces with Infinitum, creator of the sustainable, breakthrough ...
Read moreSiC and GaN Semiconductors Advances in silicon carbide and gallium nitride technologies have been characterised by development, expanding industry adoption, ...
Read moreCambridge, UKÂ -Â Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to ...
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