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Home Semiconductor

WeEn Semiconductors Showcase its Silicon Carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) at PCIM 2025

TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power server applications

Nimish by Nimish
May 6, 2025
in Semiconductor
Reading Time: 2 mins read
WeEn Semiconductors

WeEn Semiconductors SiC MOSFETs and Diodes

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Shanghai, China – WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, will showcase its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages at this year’s PCIM Expo conference and trade fair. The new packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications.

Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density.

By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs. In addition, the ability to support a greater number of power cycle extends reliability, while reduced EMI helps engineers to simplify system EMC compliance. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. 

WeEn’s TSPAK SiC technologies are ideally suited to on-board chargers and high-voltage-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.

All products are available in industrial grade and automotive grade variants.

Visitors to PCIM in Nuremberg from 6th – 8th May 2025 will have the opportunity to see the advanced SiC TSPAK technology on the WeEn booth (Hall 9, booth 131), alongside the company’s full range of bipolar products including silicon-controlled rectifiers, power diodes, high voltage transistors and silicon carbide (SiC) devices in a variety of other package options.  

For more information, please explore WeEn Semiconductors’ product portfolio here.

Tags: MOSFETsSchottky Barrier Diodes (SBDs)Silicon Carbide (SiC)WeEn Semiconductors
Nimish

Nimish

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