Lake Forest, CA – SemiQ Inc has announced a significant expansion of its third-generation QSiC™ MOSFET product line, including devices with an industry-leading current density and thermal resistance.
Seven devices have been launched, including high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge packages. The new modules dramatically increase performance, reduce cooling complexity, and cut switching losses for the next wave of EV chargers, energy storage systems, and industrial motor drives.
This expansion addresses the growing demand for ultra-efficient conversion in high-power systems, and features devices engineered for current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07ºC/W (in the 62 mm standard S3 half-bridge format).
The six-pack modules integrate the three-phase power stage into a compact housing and have an RDSon range of 19.5 to 82 mΩ. They are designed to optimize layout and minimize parasitics in motor drives and advanced AC-DC converters.
The full-bridge modules deliver high current capabilities of up to 120 A and an ultra-low on-resistance down to 8.6 mΩ. This combination, coupled with a low thermal resistance of 0.28ºC/W, maximizes power density and efficiency in single-phase inverters and high-voltage DC-DC systems.
All parts are screened using wafer-level gate-oxide burn-in tests to guarantee the gate oxide quality. They are also breakdown voltage tested to over 1350 V. Modules using these third-generation chips operate at lower gate voltages than previous generations as a result of the 18 V/-4.5 V gate voltage of the third-generation chips. SemiQ’s Gen3 technology reduces both RONsp and turn off energy losses (EOFF) by up to 30% versus previous generations.
Dr. Timothy Han: “EV infrastructure and new industrial applications require ever increasing levels of performance. With industry-leading current density and significantly lower on-resistance, our new Gen3 full-bridge, half-bridge and six-pack modules are helping organizations meet these requirements.”
| Part Numbers | Circuit Configuration | Packages | Ratings | RDSon | |
| GCMX020A120B2T1P | Six-Pack | B2 | 1200 V | 30 A | 19.5 mΩ |
| GCMX040A120B2T1P | Six-Pack | B2 | 1200 V | 30 A | 39 mΩ |
| GCMX080A120B2T1P | Six-Pack | B2 | 1200 V | 29 A | 82 mΩ |
| GCMX008B120B3H1P | Full-Bridge | B3 | 1200 V | 120 A | 8.6 mΩ |
| GCMX016B120B3H1P | Full-Bridge | B3 | 1200 V | 95 A | 16.6 mΩ |
| GCMX2P3B120S3B1-N | Half-Bridge | S3 | 1200 V | 608 A | 2.4 mΩ |
| GCMX3P5B120S3B1-N | Half-Bridge | S3 | 1200 V | 428 A | 3.6 mΩ |
Devices are available immediately, please visit SemiQ.com for specifications and to request samples or volume pricing.
