Semiconductor

Nexperia released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications....

onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics...

Cambridge GaN Devices (CGD) launched the second series of its ICeGaN™ 650 V gallium nitride HEMT family, delivering industry-leading robustness,...

Power Integrations announced a new, single-channel, plug-and-play gate driver for 190 mm x 140 mm IHM and IHV IGBT modules...

AVIVA Links announced that it will be at AutoSens Detroit 2023 demonstrating OMNIVISION’s in-vehicle camera sensor to processor connectivity using AVIVA’s ASA Motion Link...

The STMicroelectronics L6983i 10W isolated buck (iso-buck) converter ensures high efficiency and a compact footprint, with advantages including low quiescent current and 3.5V-38V...

GOLETA, Calif.—Transphorm, Inc. has announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is...

Munich, Germany – Wireless charging has become an integral part of the modern battery-powered world, providing a streamlined and user-friendly...

StaticStop, a division of SelecTech, and leader in the manufacture of innovative ESD flooring products that save time and money,...

TAE Power Solutions, a new power management subsidiary from fusion energy leader TAE Technologies, has announced the opening of a...