Electronics Era

  • About Us
  • Advertise with Us
  • Contact Us
  • e-Mag
  • Webinars
Header logo on website
Advertisement
Advertisement
Menu
  • News
    • Industry News
    • Product News
  • TECH ROOM
    • Sensor
    • VR / AR
    • Embedded
    • Medical Electronics
    • Industry 4.0
    • Robotic
    • Automation
    • Smart Machine
    • Component
    • Manufacturing
    • Aerospace & Defence
    • Security
    • Policy
  • Semiconductor
    • AUTOMOTIVE ELECTRONICS
      • EVs
      • HEVs
      • ADAS
      • Connected Cars
    • IoT-Internet of Things
      • Development Kit
      • IoT Design
    • Power Electronics
      • AC-DC/DC-DC Converters
      • Mosfets
      • IGBTs
      • LEDs
  • T & M
    • 5G testing
    • Oscilloscopes
    • SDN & NFV
    • RF & Wireless
  • AI/ML
  • Telecom
    • 5G/6G
  • RENEWABLES
    • Sustainability
  • Future Tech
    • Data Center
    • Cloud Computing
    • Big Data Analytics
  • Webinars
  • Editor’s Pick
    • Tech Article
    • Tech Blog
    • White Papers
    • EE-Tech Talk
    • Market Research
  • EE Awards
    • EE Awards 2025
    • EE Awards 2024
  • MORE
    • E-Mag
    • Events
    • Subscription
    • Contact Us
Home News Product News

CGD Second Series Icegan Ics Deliver Best-in-class Robustness

CAMBRIDGE GaN DEVICES’ SECOND SERIES ICeGaN ICs DELIVER BEST-IN-CLASS ROBUSTNESS, EASE-OF-USE & HIGH EFFICIENCY

Editorial by Editorial
May 9, 2023
in Product News, Semiconductor
Reading Time: 2 mins read
ICeGaN H2
Share on FacebookShare on TwitterShare on LinkedIn

Cambridge GaN Devices (CGD) launched the second series of its ICeGaN™ 650 V gallium nitride HEMT family, delivering industry-leading robustness, ease-of-use and maximised efficiency. H2 Series ICeGaN HEMTs employ CGD’s smart gate interface that virtually eliminates typical e-mode GaN weaknesses, delivering significantly improved overvoltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. Like previous generation devices, the new 650 V H2 ICeGaN transistors are driven similarly to Si MOSFETs, eliminating the need for complex and inefficient circuits, instead using commercially available industry gate drivers. Finally, H2 ICeGaN HEMTs feature a QG that is 10x lower than silicon parts and QOSS is 5x less, This enables H2 ICeGaN HEMTs to greatly reduce switching losses at high switching frequencies, reducing size and weight. This results in class-leading efficiency performance, a full 2% better than Industry’s best Si MOSFETs in SMPS applications.

Giorgia longobardi | CEO & Co-founder, CGD

“CGD has established an innovative leadership position with the H2 series ICeGaN. Independent research by Virginia Tech has proven ICeGaN to be industry’s most rugged GaN devices, and in terms of ease-of-use, they can be driven like a standard silicon MOSFET, so the learning curve which can slow market acceptance is eliminated. The efficiency of GaN is well known, and ICeGaN is impressive across the full load range.”

ICeGaN H2 Series feature an innovative NL3 (No Load and Light Load) Circuit, integrated on-chip alongside the GaN switch, resulting in record-low power losses. An advanced clamping structure with integrated Miller Clamp – also on-chip – eliminates the need for negative gate voltages, achieving true zero-volt turn-off, and improving dynamic RDS(ON) performance.  These e-mode (normally off) single chip GaN HEMTs include a monolithically-integrated interface and protection circuit for unmatched gate reliability and design simplicity. Finally, a Current Sense function reduces power dissipation and allows direct connection to ground for optimised cooling and EMI.

Giorgia longobardi | CEO & Co-founder, CGD

“CGD has solved all the challenges that normally slow the adoption of a new technology. Furthermore, we are now ready to satisfy the mass market with our H2 Series ICeGaN transistors which are available through an established supply chain.”

Tags: Cambridge GaN DevicesCGDelectronicsGaNICeGaNsemiconductor
Editorial

Editorial

Join Our Newsletter

* indicates required
Electronics Era

Electronics Era, India's no.1 growing B2B news forum on Electronics and Cutting Edge Technology is exploring the editorial opportunity for organizations working in the Electronics Manufacturing Services(EMS) Industry.

Follow Us

Browse by Category

  • 5G testing
  • 5G/6G
  • AC-DC/DC-DC Converters
  • ADAS
  • Aerospace & Defence
  • AI/ML
  • Automation
  • AUTOMOTIVE ELECTRONICS
  • Big Data Analytics
  • Blockchain
  • Cloud Computing
  • Component
  • Connected Cars
  • Data Center
  • Editor's Desk
  • EE-Tech Talk
  • Electronics Components
  • Embedded
  • EVs
  • Future Tech
  • HEVs
  • Industry 4.0
  • Industry News
  • IoT-Internet of Things
  • LED & Lighting
  • LEDs
  • Manufacturing
  • Market Research
  • Medical Electronics
  • Mosfets
  • News
  • Oscilloscopes
  • Policy
  • Power Electronics
  • Product News
  • RENEWABLES
  • RF & Wireless
  • Robotic
  • SDN & NFV
  • Security
  • Semiconductor
  • Sensor
  • Smart Machine
  • SMT/PCB/EMS
  • Sustainability
  • T & M
  • Tech Article
  • Tech Blog
  • TECH ROOM
  • Telecom
  • Uncategorized
  • VR / AR
  • White Papers

Recent News

DC-DC-Power-Converter

Microchip Expands its Space Portfolio with the SA15-28 DC-DC Power Converter and Companion SF100-28 EMI Filter

June 27, 2025
YOLE GROUP

From EV to AR/VR: SiC’s Expanding Reach Powers New Tech Waves

June 27, 2025
  • About Us
  • Advertise with Us
  • Contact Us

© 2022-23 TechZone Print Media | All Rights Reserved

No Result
View All Result
  • News
    • Industry News
    • Product News
  • TECH ROOM
    • Sensor
    • VR / AR
    • Embedded
    • Medical Electronics
    • Industry 4.0
    • Robotic
    • Automation
    • Smart Machine
    • Component
    • Manufacturing
    • Aerospace & Defence
    • Security
    • Policy
  • Semiconductor
    • AUTOMOTIVE ELECTRONICS
      • EVs
      • HEVs
      • ADAS
      • Connected Cars
    • IoT-Internet of Things
      • Development Kit
      • IoT Design
    • Power Electronics
      • AC-DC/DC-DC Converters
      • Mosfets
      • IGBTs
      • LEDs
  • T & M
    • 5G testing
    • Oscilloscopes
    • SDN & NFV
    • RF & Wireless
  • AI/ML
  • Telecom
    • 5G/6G
  • RENEWABLES
    • Sustainability
  • Future Tech
    • Data Center
    • Cloud Computing
    • Big Data Analytics
  • Webinars
  • Editor’s Pick
    • Tech Article
    • Tech Blog
    • White Papers
    • EE-Tech Talk
    • Market Research
  • EE Awards
    • EE Awards 2025
    • EE Awards 2024
  • MORE
    • E-Mag
    • Events
    • Subscription
    • Contact Us

© 2022-23 TechZone Print Media | All Rights Reserved

Advertisement
Advertisement