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Home Semiconductor AUTOMOTIVE ELECTRONICS

Infineon Launched CoolSiC™ MOSFET 750 V G1 Product Family

Editorial by Editorial
February 28, 2024
in AUTOMOTIVE ELECTRONICS, Semiconductor
Reading Time: 2 mins read
CoolSiC MOSFET
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Munich, Germany – Infineon Technologies AG introduces the 750V G1 discrete CoolSiC™ MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications. The product family includes both industrial-graded and automotive-graded SiC MOSFETs that are optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB) topologies. The MOSFETs are ideal for use in both typical industrial applications, such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breaker, UPS systems, servers/ datacenters, telecom, and in the automotive sector, such as onboard chargers (OBC), DC-DC converters, and many more.

The CoolSiC MOSFET 750 V G1 technology features excellent RDS (on) x Q fr and superior  RDS (on) x Q oss Figure-of-Merits (FOMs), resulting in ultra-high efficiency in hard-switching and soft-switching topologies respectively. Its unique combination of high threshold voltage (V GS(th), Typ. of 4.3 V) with low Q GD/Q GS ratio ensures high robustness against parasitic turn-on and enables unipolar gate driving, leading to increased power density and low cost of the systems. All devices use Infineon’s proprietary die-attach technology which delivers outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design combined with Infineon’s qualification standards delivers robust and long-term performance.

With a granular portfolio ranging from 8 to 140 mΩ RDS (on) at 25°C, this new CoolSiC MOSFET 750 V G1 product family meets a wide range of needs. Its design ensures lower conduction and switching losses, boosting overall system efficiency. Its innovative packages minimize thermal resistance, facilitate improved heat dissipation, and optimize in-circuit power loop inductance, thereby resulting in high power density and reduced system costs. It’s important to note that this product family features the cutting-edge QDPAK top-side cooled package.

Tags: automotive powerCoolSiC MOSFETInfineon
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