Munich, Germany – Infineon Technologies AG introduces the EiceDRIVER™ 2EDL90xG3, a 120 V common footprint gate driver designed to enable silicon (Si) and gallium nitride (GaN) power designs on the same PCB. As AI datacenters scale to higher power densities, the ability to evaluate and transition between silicon and GaN solutions without PCB redesign is becoming increasingly important for power system engineers. The 2EDL90xG3 addresses this need directly, supporting 48 V and high-voltage intermediate bus converter (HV IBC) applications while eliminating design overhead during technology evaluation. A unique 5 V gate clamp feature further simplifies GaN gate driver power supply design and contributes to improved system efficiency.
The 2EDL90xG3 offers five configurable operating modes, enabling support for a wide range of power topologies. Its dual floating output architecture, combined with the 5 V gate clamp, enables hybrid switched capacitor (HSC) topology for both silicon and GaN designs. High driver strength of 4 A source and 6 A sink provides the flexibility required to drive the secondary side of HV-IBC stages. An integrated current sensing amplifier with high bandwidth of typically 5 MHz and high common mode voltage capability of up to 35 V reduces system bill of materials (BoM) and improves power density. The current sense amplifier delivers high accuracy of typically 1 percent at full scale, supporting precise control loop regulation as well as fast overcurrent and short-circuit protection. An integrated bootstrap diode further reduces board space and system BoM in half-bridge and full-bridge applications. The 2EDL90xG3 is offered in a compact 16-pin 3 mm x 3 mm QFN package.
The driver design is optimized for use with Infineon’s broad AI server power delivery portfolio, spanning the full power chain from grid to core. This includes solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules. By combining the complementary strengths of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), Infineon offers customers a clear, proven path to end-to-end power architectures. The portfolio is supported by consistent design resources and scalable, high-quality components tailored to next-generation AI server platforms.
Availability
Samples of the 2EDL900G3 and 2EDL901G3 are available now. More information is available at www.infineon.com/part/2EDL900G3 and www.infineon.com/part/2EDL901G3.
Infineon at PCIM Europe 2026
PCIM Europe will take place in Nuremberg, Germany, from 9 to 11 June 2026. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth 470. For press inquiries, please contact [email protected]. Industry analysts interested in a briefing can email [email protected]. Information about Infineon’s PCIM 2026 show highlights is available at www.infineon.com/pcim.
