The versatile InnoSwitch3-EP flyback switcher IC family offers a wide range of voltage rating options, making design easy by allowing engineers to select the best switching technology for their application. The newest additions to the family feature 900 V gallium-nitride (GaN) technology, delivering up to 100 W with better than 93% efficiency and eliminating the need for heatsinks in space-challenged applications.
PI’s proprietary PowiGaN technology provides the reliability and ruggedness required to realize the 900 V rating. Simultaneously increasing power and efficiency, it makes InnoSwitch3-EP ICs ideal for applications such as appliances, three-phase motors and auxiliary power supplies in servers. The 900 V breakdown voltage of the primary MOSFET also means widened safety margin for regions with high or unstable line voltages, and they are pin-for-pin compatible with 725 V and 750 V InnoSwitch3-EP parts, allowing engineers to benefit from the increased power without changing the design.
All InnoSwitch3-EP devices feature synchronous rectification control, a valley-switching discontinuous conduction mode (DCM) and continuous conduction mode (CCM) flyback controller. FluxLink communication technology enables the IC package to bridge the isolation barrier, eliminating the need for optocouplers.