Transphorm Demonstrated up to 5 Microsecond SCWT on a GaN Power Transistor with a Patented Technology
GOLETA, Calif.—Transphorm has announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power ...
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Tag: GaN power semiconductors
Heraeus Electronics Participates in EU-Project “All2GaN” for Power Electronics
Heraeus Electronics is proud to announce its participation in the EU-funded research project "ALL2GaN" (Affordable smart GaN IC solutions for ...
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Transphorm Released Industry’s First 1200 V GaN-on-Sapphire Device
GOLETA, Calif.—Transphorm, Inc. has announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is ...
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GaN Systems Showcases Revolutionary Class D Amplifiers at NAMM 2023
OTTAWA, Canada – GaN Systems has announced it is showcasing industry-first GaN-powered innovations at the National Association of Music Merchants (NAMM) ...
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Electronics Era, India's no.1 growing B2B news forum on Electronics and Cutting Edge Technology is exploring the editorial opportunity for organizations working in the Electronics Manufacturing Services(EMS) Industry.
