Navitas Unveils Ultra-High-Voltage SiC Power Module
Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency Latest 2300 V, 8 mΩ full-bridge ...
Read moreNavitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency Latest 2300 V, 8 mΩ full-bridge ...
Read moreTORRANCE, CA — Navitas Semiconductor has announced that the first shipments of U.S.-manufactured 5th Generation GaNFast™ technology, in partnership with GlobalFoundries (GF), ...
Read moreThe proposed acquisition is expected to provide the last step in power delivery to the core to complete Navitas’ grid-to-xPU ...
Read moreTorrance, CA and Lausanne, Switzerland — Navitas Semiconductor, a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, ...
Read moreTORRANCE, CA— Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC), today announced an ...
Read moreTORRANCE, CA – Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) and ...
Read moreNavitas Semiconductor announced progress in its development of advanced medium and high 800 VDC voltage GaN and SiC power devices ...
Read moreTORRANCE, CA – Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power ...
Read moreTORRANCE, CA – Navitas Semiconductor , the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) ...
Read moreTORRANCE, CA —Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s ...
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