EPC Announced the Mass Production of the EPC2370
The ultra-low 0.28 mΩ eGaN® FET has a transient voltage rating of 22 V enabling higher efficiency, 1 MHz or ...
Read moreThe ultra-low 0.28 mΩ eGaN® FET has a transient voltage rating of 22 V enabling higher efficiency, 1 MHz or ...
Read moreMunich, Germany – Megatrends such as green mobility, robotics, and artificial intelligence are placing increasingly demanding requirements on power systems ...
Read moreMunich, Germany – As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board ...
Read moreMunich, Germany – Infineon Technologies AG is expanding its XDP™ digital power protection controller product family with the XDP700-002, the ...
Read moreMunich, Germany – The ever-increasing power demand in data centers and computing applications requires advancements in power efficiency and compact ...
Read moreVishay Intertechnology has introduced two new 30 V symmetric dual n-channel power MOSFETs that combine high and low side TrenchFET® Gen ...
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