U.S. Govt Selected Navitas to Develop Next-Generation 10 kV SiC Power Semiconductors
TORRANCE, CA — Navitas Semiconductor, the industry leader in next-generation GaNFastTM gallium nitride (GaN) and GeneSiCTM silicon carbide (SiC) power ...
Read moreTORRANCE, CA — Navitas Semiconductor, the industry leader in next-generation GaNFastTM gallium nitride (GaN) and GeneSiCTM silicon carbide (SiC) power ...
Read moreBy: Maurizio Di Paolo Emilio | Marcom Director | EPC Gallium nitride (GaN) power technology is entering a new phase. ...
Read moreHow a wide-bandgap upstart is redefining radar, electronic warfare, secure comms, and directed energy—while resetting the SWaP-C baseline for military ...
Read moreMunich, Germany – Infineon Technologies AG is introducing the CoolGaN™ Bidirectional Switch (BDS) 650 V G5, a gallium nitride (GaN) ...
Read moreTORRANCE, CA – Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ...
Read moreTORRANCE, CA —Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs ...
Read moreMunich, Germany – Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels ...
Read moreICeGaN® provides easy to use drop-in replacement for IGBTs Although gallium nitride (GaN) has been discussed as an interesting solution ...
Read moreIntroduction Nitride materials, particularly gallium nitride (GaN) and aluminum nitride (AlN), are revolutionizing various technological sectors due to their unique ...
Read moreMouser Electronics announces a new eBook in collaboration with Analog Devices (ADI) and Bourns exploring the challenges and benefits of ...
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