TORRANCE, CA — Navitas Semiconductor, the industry leader in next-generation GaNFastTM gallium nitride (GaN) and GeneSiCTM silicon carbide (SiC) power semiconductors, has announced it has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program to develop next-generation 10 kV silicon carbide (SiC) power semiconductor technology.
Following a rigorous competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon carbide technology companies in recognition of its unmatched leadership in UHV SiC innovation, proven ability to deliver defense-grade performance and reliability, and resilient U.S.-anchored manufacturing ecosystem for advanced power semiconductor technologies.
The ALATTIS prototype project will develop, execute, and validate a novel domestic manufacturing process for ultra-high-voltage (≥10 kV) silicon SiC power semiconductor devices through iterative design, fabrication, and testing.
The project is sponsored by the Army Research Laboratory (ARL), which operates under the U.S. Army Combat Capabilities Development Command (DEVCOM). The ALATTIS prototype program seeks to develop, execute, and validate a novel and currently unavailable domestic manufacturing process for 10 kV IGBTs. ALATTIS is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defense and infrastructure applications. The program will accelerate the development of next-generation 10 kV SiC insulated-gate bipolar transistors (IGBTs) and associated PiN diode technologies for mission-critical systems used by the Armed Forces.
Navitas’ GeneSiC™ SiC power semiconductor portfolio, led by its flagship trench-assisted planar (TAP) MOSFET architecture, spans voltage ratings from 650 V to 6.5 kV and is engineered, manufactured, and supported by a resilient U.S.-anchored supply chain, enabling secure domestic production of advanced power semiconductor technologies for next-generation defense and critical infrastructure applications. Navitas has pioneered multiple industry firsts in UHV SiC, including:
- 6.5 kV SiC thyristors in 2010, recognized with a 2010 R&D 100 Award
- 10–15 kV PiN diodes in 2012
- 6.5 kV SiC MOSFETs commercial release in 2021
“The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognizes Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas. “This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.”
To learn more about Navitas’s capabilities in UHV SiC technology, please contact a Navitas Representative or email: info@navitassemi.com.
